论文标题
带有二维半导体墨水的喷墨印刷电路，用于高性能电子
Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics
论文作者
论文摘要
适合互补逻辑的气稳定半导体油墨是创建低功率印刷集成电路（ICS）的关键。具有二维材料的高性能可打印电子油墨具有使下一代高性能，低成本印刷数字电子产品的潜力。在这里，我们证明了喷墨印刷的N型钼二硫化物（MOS2）和P型indacenopithiopheneophene-benzothiadiazole（IDT-BT）田间效应晶体管（FETS）（FETS）（FETS）的空气稳定，低压（<5 V）操作。我们通过工程高质量的MOS2和空气稳定的IDT-BT墨水来实现这一目标，适用于N型MOS2和P型IDT-BT FET的喷墨印刷互补对。然后，我们集成了MOS2和IDT-BT FET，以实现具有电压增益| AV |的喷墨印刷互补逻辑逆变器〜4当电阻负载配置和| AV | 〜1.36互补配置。这些结果代表了迈出无处不在的长期稳定，低成本印刷数字IC的关键步骤。
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of τ ~ 3.3 μs for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
