论文标题
在BI $ _2 $ SE $ _3 $和（BI，SB）$ _ 2 $ _ 2 $ TE $ _3 $的界面上，缺乏磁性抗效应
Absence of magnetic-proximity effect at the interface of Bi$_2$Se$_3$ and (Bi,Sb)$_2$Te$_3$ with EuS
论文作者
论文摘要
我们对（bi，sb）$ _ 2 $（SE，TE）$ _ 3 $ family和磁绝缘子EUS进行了X射线磁圆二色性（XMCD）测量。 XMCD测量值使我们能够在非常TI/EUS界面上研究元素选择性磁接近度。系统分析表明，Ti内既没有显着的诱导磁性，也没有在这种界面上增强欧盟磁矩。 BI，SB，TE和SE位点中的诱导磁矩低于$ \ sim \！10^{ - 3} $ $ $ $ $ $ $ $ $ mathrm {b} $/AT的XMCD测量的估计检测极限。
We performed x-ray magnetic circular dichroism (XMCD) measurements on heterostructures comprising topological insulators (TIs) of the (Bi,Sb)$_2$(Se,Te)$_3$ family and the magnetic insulator EuS. XMCD measurements allow us to investigate element-selective magnetic proximity effects at the very TI/EuS interface. A systematic analysis reveals that there is neither significant induced magnetism within the TI nor an enhancement of the Eu magnetic moment at such interface. The induced magnetic moments in Bi, Sb, Te, and Se sites are lower than the estimated detection limit of the XMCD measurements of $\sim\!10^{-3}$ $μ_\mathrm{B}$/at.
