论文标题
低损坏硅微环谐振器中的超刺式连接电极
Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
论文作者
论文摘要
足够的电气控制需要接近设备的活动区域的电极。由于必须保留低光损耗才能实现高质量的运行，因此将这种电极集成到光学设备中可能具有挑战性。在这里，我们证明，可以将金属浅磷掺杂层掺有硅微环腔，该腔可以在低温温度下起作用。我们验证浅掺杂层会影响局部折射指数，同时诱发最小的损失，质量因素最小为10 $^5 $。该演示为电子设备（例如单电子晶体管）集成到同一材料平台上的光电路的途径开辟了一条途径。
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 10$^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform.
