论文标题
srcu $ _3 $ o $ _4 $的外延稳定与无限Cu $ _ {3/2} $ o $ $ _2 $ layers
Epitaxial stabilization of SrCu$_3$O$_4$ with infinite Cu$_{3/2}$O$_2$ layers
论文作者
论文摘要
我们报告了Srcu $ _3 $ o $ _4 $的外延薄膜的合成，并使用分子束交往。实验和理论表征表明，该材料是一种可稳定的相，可以通过从（001）-srtio $ _3 $底物中应用拉伸双轴应变而存在。 srcu $ _3 $ o $ _4 $根据Cu $^{2+} $ Valence State显示出X射线光电子光谱法。第一原理计算还表明，由于缺乏根尖的阴离子，$ d_ {3z^2-r^2} $ band变得基本稳定，相比之下，与$ a_2 $ _2 $ _3 $ _3 $ _4 $ _4 $ _4 $ _4 $ cl $ _2 $ _2 $（$ a = $ a = $ sr，ba，ba） trans-cuo $ _4 $ cl $ _2 $八面体。这些结果表明，基于Cu $ _3 $ o $ $ _4 $飞机，Srcu $ _3 $ o $ $ _4 $是电子掺杂超导的合适父材料。
We report the epitaxial thin film synthesis of SrCu$_3$O$_4$ with infinitely stacked Cu$_3$O$_4$ layers composed of edge-sharing CuO$_4$ square-planes, using molecular beam epitaxy. Experimental and theoretical characterizations showed that this material is a metastable phase that can exist by applying tensile biaxial strain from the (001)-SrTiO$_3$ substrate. SrCu$_3$O$_4$ shows an insulating electrical resistivity in accordance with the Cu$^{2+}$ valence state revealed X-ray photoelectron spectroscopy. First-principles calculations also indicated that the unoccupied $d_{3z^2-r^2}$ band becomes substantially stabilized owing to the absence of apical anions, in contrast to $A_2$Cu$_3$O$_4$Cl$_2$ ($A = $Sr, Ba) with an $A_2$Cl$_2$ block layer and therefore a trans-CuO$_4$Cl$_2$ octahedron. These results suggest that SrCu$_3$O$_4$ is a suitable parent material for electron-doped superconductivity based on the Cu$_3$O$_4$ plane.
