论文标题
在重掺杂的半导体等离激光量中的自由电子非线性
Free electron nonlinearities in heavily doped semiconductors plasmonics
论文作者
论文摘要
在中红外频率下，大量掺杂的半导体已成为可调的低损耗等离子材料。在本文中，我们研究了与高浓度的游离电子相关的非线性光学现象。我们使用流体动力描述来研究高达三阶术语的重掺杂的半导体中的自由电子动力学，通常对于贵金属而言，这通常可以忽略不计。我们发现，即使第二次谐波发电效率为零，由于第二次谐波信号而导致的第三次谐波产生也可以像直接的第三谐波生成贡献一样强。此外，我们表明，与等离子增强的无线性非线性相结合时，可能比传统的半导体非线性大两个数量级。我们的研究可能会在中红外频率下为非线性光学集成设备打开新途径。
Heavily doped semiconductors have emerged as tunable low-loss plasmonic materials at mid-infrared frequencies. In this article we investigate nonlinear optical phenomena associated with high concentration of free electrons. We use a hydrodynamic description to study free electron dynamics in heavily doped semiconductors up to third-order terms, which are usually negligible for noble metals. We find that cascaded third-harmonic generation due to second-harmonic signals can be as strong as direct third-harmonic generation contributions even when the second-harmonic generation efficiency is zero. Moreover, we show that when coupled with plasmonic enhancement free electron nonlinearities could be up to two orders of magnitude larger than conventional semiconductor nonlinearities. Our study might open a new route for nonlinear optical integrated devices at mid-infrared frequencies.
