论文标题
在单晶INSB纳米片中强且可调的自旋轨道相互作用
Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet
论文作者
论文摘要
实现了双门INSB纳米表效果设备，并用于研究狭窄的带隙半导体INSB纳米片中自旋轨道相互作用的物理起源和可控性。我们证明，通过在双门上施加电压，可以在INSB纳米片中有效调整自旋轨道相互作用。我们还发现在零双门电压的INSB纳米片中存在固有的自旋轨道相互作用，并确定其物理起源是设备层结构中的建筑不对称性。在INSB纳米片中具有强大而可控的自旋轨道相互作用可以简化自旋欺骗，基于自旋的量子设备和拓扑量子设备的设计和实现。
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices.
