论文标题
化学计量学BI2SE3拓扑绝缘子超薄膜通过用于光电应用的新制造工艺获得
Stoichiometric Bi2Se3 Topological Insulator Ultra-Thin Films Obtained Through a New Fabrication Process for Optoelectronic Applications
论文作者
论文摘要
开发了一种新的制造工艺，用于生长纳米线/纳米生物和超薄膜的形式的BI2SE3拓扑绝缘子。它由两个连续的程序组成：第一个BI2SE3纳米线/纳米质体由标准催化剂游离蒸气 - 固定沉积沉积在位于石英管内的不同底物上。然后，粘在石英管的内表面上的BI2SE3被重新蒸发并以超薄膜的形式沉积在低于100°C的新底物上，这与柔性电子应用相关。该方法是新的，快速，非常便宜的，易于控制的方法，并允许在相同的过程中获得不同厚度的薄膜至一个五五倍层（QL）。通过不同的光学，电子和结构技术分析了纳米线/纳米生物和薄膜的组成和晶体结构。对于这些膜，扫描隧道光谱表明，由于达到正确的化学计量，费米水平位于能带隙的中间。超薄薄膜，在N掺杂的Si底物上沉积的范围为1-10 QL，显示出良好的整流特性
A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at temperature below 100 °C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films is analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectified properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range
