论文标题
来自电子电子相互作用的3D-DIRAC半学的电阻率指数
Resistivity Exponents in 3D-Dirac Semimetals From Electron-Electron Interaction
论文作者
论文摘要
我们研究在存在现场电子电子相互作用的情况下，具有线性分散的三维半学的电阻率。常规金属电阻率的众所周知的二次温度依赖性变成了不寻常的$ t^6 $ behavior。类似的变化会影响热传输，从而保留了热电导率和电导率之间比率的线性。这些结果来自弱耦合到莫特过渡的非扰动区域。我们的发现对迄今为止尚不理解的大型指数产生了自然的解释，这些指数表征了在各种拓扑半学上运输实验的温度依赖性。
We study the resistivity of three-dimensional semimetals with linear dispersion in the presence of on-site electron-electron interaction. The well-known quadratic temperature dependence of the resistivity of conventional metals is turned into an unusual $T^6$-behavior. An analogous change affects the thermal transport, preserving the linearity in $T$ of the ratio between thermal and electrical conductivities. These results hold from weak coupling up to the non-perturbative region of the Mott transition. Our findings yield a natural explanation for the hitherto not understood large exponents characterizing the temperature-dependence of transport experiments on various topological semimetals.
