论文标题
CMOS兼容的铝基于硝酸盐的铁电隧道连接备忘录
A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
论文作者
论文摘要
我们报告了使用二掺杂的二氧化铝氮化铝作为铁电层的互补金属氧化物半导体（CMOS）技术，该技术兼容的铁电隧道交界器备忘录直接在硅底物上生长。
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
