论文标题
电子孔雪崩的统计数据
The statistics of electron-hole avalanches
论文作者
论文摘要
通过雪崩过程的电荷乘法通常用于检测高能量物理及其他地区的单个光子或带电的颗粒。在本报告中，我们对由两种电荷载体驱动的雪崩的性质进行了详细讨论，例如半导体中的电子和孔暴露于电场。我们得出了描述在不均匀电场中发展的雪崩的一般情况，并为恒定场提供了分析解决方案。我们讨论了可以通过高于故障限制的检测器来解决的时间分辨率的后果，例如单光子雪崩二极管（SPADS）和硅光电层（sipms）。我们的结果还描述了获得有限增益的雪崩，对于雪崩光电二极管（APD）和低增益雪崩探测器（LGADS）很重要。
Charge multiplication through avalanche processes is commonly employed in the detection of single photons or charged particles in high-energy physics and beyond. In this report, we provide a detailed discussion of the properties of avalanches driven by two species of charge carriers, e.g. electrons and holes in a semiconductor exposed to an electric field. We derive equations that describe the general case of avalanches developing in inhomogeneous electric fields and give their analytical solutions for constant fields. We discuss consequences for the time resolution achievable with detectors that operate above the breakdown limit, e.g. single-photon avalanche diodes (SPADs) and silicon photomultipliers (SiPMs). Our results also describe avalanches that achieve finite gain and are important for avalanche photodiodes (APDs) and low-gain avalanche detectors (LGADs).
