论文标题
在超薄硅Huygens metaSurface中,Kerker型散射的建设性和破坏性干扰
Constructive and Destructive Interference of Kerker-type Scattering in an Ultra-thin Silicon Huygens Metasurface
论文作者
论文摘要
高折射率介电纳米颗粒通过干扰多极模式为外来光线操纵提供了一个新的平台。 Kerker效应是Huygens源设计的一个例子。我们没有像许多常规的Huygens源设计那样利用电偶极子和磁性偶极子之间的干扰,而是探索Kerker型的kerker型抑制了由主电偶极子,环形偶极子和磁性四倍的介导的向后散射。这些模式由设计和制造的CMOS兼容超薄硅纳米型元脉冲和抑制的磁偶极子贡献提供,并通过多极分解验证。使用半分析转移矩阵模型来考虑非平凡的底物效应。该模型成功预测了观察到的反射倾角。通过应用一般标准进行建设性和破坏性干扰,虽然发生建设性干扰发生在电动和环形偶极子之间的贡献之间,但实验观察到的被抑制的后向后kerker型散射引起的造成了破坏性干扰,这是由于全电动偶极子和磁性磁脉冲造成的向后散射的贡献。我们的研究铺平了通向新型的Huygens源或元图设计的方式,例如特殊的横向kerker散射。
High refractive index dielectric nanoparticles have provided a new platform for exotic light manipulation through the interference of multipole modes. The Kerker effect is one example of a Huygens source design. Rather than exploiting interference between the electric dipole and magnetic dipole, as in many conventional Huygens source designs, we explore Kerker-type suppressed backward scattering mediated by the dominant electric dipole, toroidal dipole and magnetic quadrupole. These modes are provided by a designed and fabricated CMOS compatible ultra-thin Silicon nanodisk metasurface with a suppressed magnetic dipole contribution, and verified through multipole decomposition. The non-trivial substrate effect is considered using a semi-analytical transfer matrix model. The model successfully predicts the observed reflection dip. By applying a general criterion for constructive and destructive interference, it is shown that while constructive interference occurs between the electric and toroidal dipole contributions, the experimentally observed suppressed backward Kerker-type scattering arises from the destructive interference between backward scattered contributions due to the total electric dipole and the magnetic quadrupole. Our study paves the way towards new types of Huygens sources or metasurface design, such as for peculiar transverse Kerker scattering.