论文标题
直接观察到远低于过渡温度的V3O5中的电触发的绝缘体金属过渡
Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature
论文作者
论文摘要
电阻转换是用于应用非易失性记忆或神经形态计算等应用的关键现象之一。 V3O5是氧化物氧化物麦克糖系列的一种化合物，是室温高于室温（TC〜415 K）的罕见材料之一。在这里，我们通过施加电场来证明在室温下（低于相变温度的120 K），在V3O5设备中，V3O5设备中的静态直流电阻开关（RS）和快速振荡尖峰机。我们使用Operando光学成像来跟踪RS期间的反射率变化，并发现形成了高温金属相丝。这表明电诱导的RS会触发相变。此外，我们从光学地捕获了与负差分抗性状态联系在一起的尖峰振荡，并通过定期时空的不稳定性找到了细丝形式并溶解了我们通过数值模拟所描述的。
Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations.
