论文标题
可扩展的CMOS-BEBEOL兼容ALSCN/2D通道Fe-Fets
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
论文作者
论文摘要
将内存设备与逻辑晶体管的密切集成是计算机硬件中的边界挑战。这种集成对于在人工智能等大数据应用程序中同时增强计算能力以及增强的能源效率至关重要。尽管做出了数十年的努力，但可靠，紧凑，节能和可扩展的内存设备还是难以捉摸的。铁电场效应晶体管（FE-FETS）是有前途的候选人，但其在后端（BEOL）过程中的可伸缩性和性能仍未得到相关。在这里，我们使用二维（2D）MOS2通道和ALSCN铁电介电介绍了可扩展的Beol兼容Fe-Fets。我们已经制造了大量的Fe-Fets，其内存窗口大于7.8 V，ON/OFF比率大于10^7，并且电流密度大于250 UA/UM，均在〜80 nm的通道长度下。我们的设备显示出高达20000秒的稳定保留率，除了具有4位脉冲可编程内存功能外，最高可达20000个周期，从而打开了具有SI CMOS逻辑的2D半导体记忆的可伸缩3D异质整合的路径。
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
