论文标题
电荷密度波绝缘子中门控诱导的电阻转变的非平衡动力学
Nonequilibrium Dynamics of Gating-Induced Resistance Transition in Charge Density Wave Insulators
论文作者
论文摘要
我们介绍了荷尔斯坦模型的电荷密度波（CDW）状态下通心诱导的绝缘体到金属过渡的全面数值研究。使用非平衡绿色功能方法计算出的力的大规模布朗动力学方法用于模拟CDW状态的时空动力学。我们表明，需要诱导CDW的不稳定性，该阈值电压由内间边缘模式的能量确定。另一方面，很大的偏置电压会突然向金属状态过渡，类似于介电故障。在中间电压下，我们的广泛模拟表明，向低阻力状态的过渡是通过门控电极在薄导电层的成核引发的。然后通过电压偏置将所得的金属胰界面界面横扫系统，从而导致金属域的增长。我们进一步表征了域壁动力学的电压和温度依赖性。
We present a comprehensive numerical study of the gating-induced insulator-to-metal transition in the charge density wave (CDW) state of the Holstein model. Large-scale Brownian dynamics method with forces computed from nonequilibrium Green's function method is employed to simulate the spatio-temporal dynamics of the CDW state. We show that a threshold voltage, determined by the energy of the in-gap edge modes, is required to induce the instability of the CDW. A large bias voltage, on the other hand, induces a sudden transition to the metallic state similar to a dielectric breakdown. At intermediate voltages, our extensive simulations show that the transition to the low-resistance state is initiated by the nucleation of a thin conducting layer at the gating electrode. The resultant metal-insulator interface is then swept over the system by the voltage bias, resulting in a growing metallic domain. We further characterize the voltage and temperature dependence of the domain-wall dynamics.
