论文标题
带有纳米孔底覆层的电泵送蓝色激光二极管
Electrically pumped blue laser diodes with nanoporous bottom cladding
论文作者
论文摘要
我们证明了带有纳米多孔底层的电泵送III氮化物激光二极管（LDS）。 LD结构是通过等离子体辅助分子束外延生长的。将高度掺杂的350 nm厚的gan：Si覆层层的Si浓度为6 x 1019 cm-3的电化学蚀刻，以获得15 +/- 3％的孔隙率，孔径为20 +/- 9 nm。将带有纳米孔底覆层的设备与参考结构进行了比较。脉冲模式的操作是在448.7 nm处获得的，斜率效率（SE）为0.2 W/a，而没有蚀刻覆层层的参考设备在457 nm处激光，SE为0.56 w/a。从理论上对带有多孔底层覆层的LDS的去签名进行了建模。执行的计算可以选择所需的光学模式约束所需的覆层的最佳孔隙率和厚度，并降低了向基板和顶部金属接触的光泄漏的风险。该演示为制造III氮化物LDS的制造开辟了新的可能性。
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.
