论文标题
超紧凑型Si/in $ _2 $ o $ _3 $混合等离激元波导调制器，高带宽超过40 GHz
Ultra-compact Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator with a high bandwidth beyond 40 GHz
论文作者
论文摘要
光学调节器必须具有高调制带宽和紧凑的足迹。 In this paper we experimentally demonstrate a novel Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator, which is realized by an asymmetric directional coupler (ADC) consisting of a silicon photonic waveguide and a Si/In$_2$O$_3$ hybrid plasmonic waveguide.光学信号是通过在MOS电容器顶部的AU电极上施加的射频（RF）信号调节的，并与$ _2 $ o $ $ _3 $薄膜联系。 > 40 GHz的创纪录的调制带宽是由第一次集成在3.5- $ m $ m $ m-m-m-m长的不对称方向耦合器（ADC）中的硅掺杂金属氧化物$ _2 $ _3 $ _3 $ _3 $ _3 $ _3 $的最高调制带宽。
Optical modulators are required to have high modulation bandwidths and a compact footprint. In this paper we experimentally demonstrate a novel Si/In$_2$O$_3$ hybrid plasmonic waveguide modulator, which is realized by an asymmetric directional coupler (ADC) consisting of a silicon photonic waveguide and a Si/In$_2$O$_3$ hybrid plasmonic waveguide. The optical signal is modulated by radio-frequency (RF) signal applied on the Au electrodes at the top of MOS capacitor and contacting the In$_2$O$_3$ thin film. The record-high modulation bandwidth of >40 GHz is realized by a silicon-doping-free metal-oxide-In$_2$O$_3$ capacitor integrated in a 3.5-$μ$m-long asymmetric directional coupler (ADC) for the first time.
