论文标题
基于有机Mott绝缘子$κ$ - (bedt-ttf)$ _ {2} $ cu [n(cn)$ _ {2} $] Cl
Simultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl
论文作者
论文摘要
量子多体系统的物理学已经使用了散装相关材料进行了研究,最近,原子双层形成的Moiré超晶格已经成为一个新型平台,在该平台中,载体浓度和带状结构非常可调。在这篇简短的评论中,我们在这些系统之间介绍了一个中间平台,即,基于真正的有机Mott绝缘子$κ$κ$ - (BEDTTTTF)$ _ {2} $ cu [n(cn(cn)$ _ {2} $ _ {2} $] $ _ {2} $] $ _ {2} $] $。在半填充时带宽控制的莫特过渡的接近度中,电子和孔掺杂诱导了同一样品中的超导性(几乎相同的过渡温度)。在电动双层掺杂下的正常状态表现出与许多相关材料中的非弗米液体行为。超导性和非Fermi液体行为的掺杂水平是高度兴奋剂 - 对称的。基于各向异性三角晶格的模型计算解释了许多现象和掺杂不对称,这意味着非相互作用带结构的重要性(尤其是频带的平坦部分)。
The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).