论文标题
绝缘剂的非极性液化液中纳米级空间分辨率的宏观域结构的图形直接编写
Graphical Direct-Writing of Macroscale Domain Structures with Nanoscale Spatial Resolution in Non-Polar-Cut Lithium Niobate on Insulators
论文作者
论文摘要
我们报道了一种图形结构域工程技术，其能力可以通过扫描原子力显微镜的偏置探针尖端在绝缘子上在非极性切割的尼贝特薄膜中使用纳米级空间分辨率制造宏观域结构。已经发现，即使尖端诱导的极化场是镜像对称的，域的写作过程对于自发极化PS是不对称的。各种域结构的尺寸大于毫米，同时由纳米级域元素组成，并且与PS相对于PS的任意域壁倾斜角，然后直接将其直接写入非极性晶状体硅晶晶体。作为原理演示的证明，在600 nm的绝缘子上定期刺激的X型二甲虫薄膜，深度为460 nm，长度约为1 mm。该技术对于基于绝缘体硅锂的集成光学和光电机和域壁纳米电解质的设备应用可能很有用。
We reported on a graphical domain engineering technique with the capability to fabricate macroscale domain structures with nanoscale spatial resolution in non-polar-cut lithium niobate thin film on insulators through the biased probe tip of scanning atomic force microscopy. It was found that the domain writing process is asymmetric with respect to the spontaneous polarization Ps even though the tip-induced poling field is mirror-symmetric. Various domain structures, with a dimension larger than millimeters while consisting of nanoscale domain elements and with arbitrary domain-wall inclination angle with respect to Ps, were designed graphically and then written directly into non-polar-cut lithium niobate crystals. As a proof of principle demonstration, periodically poled x-cut lithium niobate thin film on insulators with a period of 600 nm, a depth of 460 nm and a length of ~1 mm was fabricated. This technique could be useful for device applications in integrated optics and opto-electronics and domain-wall nanoelectronics based on lithium niobate on insulator.
