论文标题
由主动拓扑缺陷产生的自发流动
Spontaneous flow created by active topological defects
论文作者
论文摘要
拓扑缺陷是液晶大规模组织的根源。在二维主动命名中,已知有两类电荷的拓扑缺陷$ \ pm 1/2 $由于主动应力而起着主要作用。尽管这一点很重要,但在主动拓扑缺陷周围的流场和活动压力模式上几乎没有得到分析结果。使用活动系统的通用流体动力学理论,我们研究了这些拓扑缺陷周围的流动和应力模式,这些拓扑缺陷在无界的二维活性列明中。在通用假设下,我们在分析中得出了在剪切和旋转粘度的存在下自我辅助缺陷的自发速度和失速力。将我们的形式主义应用于汇合处细胞伸长细胞的单层动力学,我们表明细胞数的不保存通常会增加自变义速度,并可以为它们在细胞挤出和多层化中观察到的作用提供解释。我们最终以数值方式研究了埃里克森(Ericksen)应力的影响。我们的工作为拓扑缺陷在活性夜毒中的作用,尤其是在细长细胞的单层中的作用铺平了一项通用研究。
Topological defects are at the root of the large-scale organization of liquid crystals. In two-dimensional active nematics, two classes of topological defects of charges $\pm 1/2$ are known to play a major role due to active stresses. Despite this importance, few analytical results have been obtained on the flow-field and active-stress patterns around active topological defects. Using the generic hydrodynamic theory of active systems, we investigate the flow and stress patterns around these topological defects in unbounded, two-dimensional active nematics. Under generic assumptions, we derive analytically the spontaneous velocity and stall force of self-advected defects in the presence of both shear and rotational viscosities. Applying our formalism to the dynamics of monolayers of elongated cells at confluence, we show that the non-conservation of cell number generically increases the self-advection velocity and could provide an explanation for their observed role in cellular extrusion and multilayering. We finally investigate numerically the influence of the Ericksen stress. Our work paves the way to a generic study of the role of topological defects in active nematics, and in particular in monolayers of elongated cells.