论文标题
使用陷阱集成的雪崩光电二极管检测高保真离子状态检测
High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
论文作者
论文摘要
集成技术大大增强了基于捕获离子的实用量子信息处理和传感设备的前景。高速和高保真离子状态读数对于任何此类应用都至关重要。集成检测器为系统可移植性提供了显着的优势，并且如果可以在每个离子捕获位置合并一个单独的检测器，也可以极大地促进并行操作。在这里，我们在室温下使用单光雪崩二极管（SPADS）在室温下进行了离子量子状态检测，直接集成到硅离子诱捕芯片的底物中。 We detect the state of a trapped $^{88}\text{Sr}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $μ$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped $^{88}\text{Sr}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $μ$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
