论文标题
计算3+1个维度的Su（n）晶格量规场的拓扑电荷（密度）的更多方法
More methods for calculating the topological charge (density) of SU(N) lattice gauge fields in 3+1 dimensions
论文作者
论文摘要
我们重新审视旧的想法，即涂抹或阻止SU（N）晶格量规场，或在该领域附近创建的一组田地上平均，可以充分降低高频波动，以至于拓扑电荷密度的天真晶格操作员能够提供可靠的场地拓扑费用。我们表明，这三种方法确实确实提供了计算总拓扑电荷的其他简单方法，在当前耦合时涂抹特别经济。更有趣的是，整体平均方法也可以用来揭露拓扑充电时空的分布，并且在概念上透明（尽管计算上昂贵），方法提供了一个有用的基准，可以与其他方法进行比较。使用此基准测试，我们发现一些涂抹步骤在揭露拓扑充电时空分布方面也可靠，从而提供了一种非常经济和简单的方法。我们还使用相同的基准来确定一个“冷却”扫描的数量是多少，以便可靠地暴露电荷密度。
We revisit old ideas that smearing or blocking an SU(N) lattice gauge field, or averaging over an ensemble of fields created in the neighbourhood of that field, can reduce the high frequency fluctuations sufficiently that the naive lattice operator for the topological charge density is able to provide a reliable measure of the topological charge of the field. We show that these three methods do indeed provide additional simple methods for calculating the total topological charge, with smearing particularly economical at current couplings. More interestingly, the ensemble average method can also be used to expose the distribution in space-time of the topological charge and this conceptually transparent, albeit computationally expensive, method provides a useful benchmark against which to compare other methods. Using this benchmark we find that a few smearing steps are also reliable in exposing the distribution in space-time of the topological charge, thus providing a very economical and simple method for doing so. We also use the same benchmark to determine what is the number of `cooling' sweeps one needs to perform in order to expose the charge density reliably.
