论文标题
在氮化硅波导中集成的无定形 - 硅硅晶状体可见光检测器
Amorphous-silicon visible-light detector integrated in silicon nitride waveguides
论文作者
论文摘要
可见光的光整合光子学正在成为一种有前途的技术，用于实现光学设备，以用于传感，量子信息和通信，成像和显示器中的应用。在现有的光子平台中，高索引对比氮化硅（$ si_ {3} n_ {4} $）波导在可见的光谱范围内提供宽带透明度和高度集成。至于光子综合电路（图片）的复杂性增加，需要芯片检测器来监视其重新配置和稳定操作的工作点。在这项工作中，我们提供了一个集成在$ si_ {3} n_ {4} $ waveGuides中的紧凑型内电源监视器，该电源在红光波长范围（660 nm）中运行。所提出的设备利用了用作光学波导的涂料层的氢化无定形硅（A-SI：H）的光电导率。实验结果表明，响应性为30 mA/w，灵敏度为-45 dBm和$ $ $ $ $ s的时间响应。这些功能使建议的光电自动导体可以使用可见光的光线监测和控制可见光$ si_ {3} n_ {4} $图片。
Visible light integrated photonics is emerging as a promising technology for the realization of optical devices for applications in sensing, quantum information and communications, imaging and displays. Among the existing photonic platforms, high-index contrast silicon nitride ($Si_{3}N_{4}$) waveguides offer broadband transparency in the visible spectral range and a high scale of integration. As far as the complexity of photonic integrated circuits (PICs) increases, on-chip detectors are required to monitor their working point for reconfiguration and stabilization operations. In this work we present a compact in-line power monitor integrated in $Si_{3}N_{4}$ waveguides that operates in the red-light wavelength range (660 nm). The proposed device exploits the photoconductivity of a hydrogenated amorphous silicon (a-Si:H) film employed as a coating layer of the optical waveguide. Experimental results show a responsivity of 30 mA/W, a sensitivity of -45 dBm and a sub-$μ$s time response. These features enable the use of the proposed photoconductor for high-sensitivity monitoring and control of visible-light $Si_{3}N_{4}$ PICs.
