论文标题
碳化硅中点缺陷的光学和应变稳定
Optical and Strain Stabilization of Point Defects in Silicon Carbide
论文作者
论文摘要
通过制造光学隔离的平板波导结构并仔细控制退火和冷却条件，可以增强碳化硅颜色中心集合的光发光和自旋特性。我们发现，在平板波导中通过相同植入的体积缺陷的数量级增强了植入缺陷集合的光致发光信号。几种缺陷物种的平板波导增强的光致发光用于研究重组和扩散，并在迅速淬火冷却和更长的环境条件下进行热退火。利用了薄膜的限制机械几何形状，以测量带负电荷的硅单场的自旋 - 应变耦合。这项工作中的方法可用于对碳化硅中的近表面发射器进行更大的控制，并更好地理解和控制菌株对碳化硅基颜色中心的自旋测量的影响。
The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. The slab waveguide-enhanced photoluminescence of several defect species is used to study recombination and diffusion in the presence of thermal annealing with both rapid quench cooling and a longer return to ambient conditions. The confined mechanical geometry of the thin film is exploited to measure the spin-strain coupling of the negatively charged silicon monovacancy. The methods in this work can be used to exercise greater control on near-surface emitters in silicon carbide and better understand and control the effects of strain on spin measurements of silicon carbide based color centers.
