论文标题
1/f在漂移和半导体材料中的热搅动下的噪声
1/f Noise Under Drift And Thermal Agitation In Semiconductor Materials
论文作者
论文摘要
沃斯（Voss）和克拉克（Clarke）观察到约翰逊噪声的正方形中的1/f噪声在热平衡中的样品中，而无需施加电流。我们将此现象称为热1/F噪声。沃斯（Voss）和克拉克（Clarke）建议将空间相关的温度波动作为热1/f噪声的起源；他们还表明，热1/F噪声通过将电流传递到样品中获得的1/F频谱与1/F频谱非常匹配。最近引入了间歇性产生 - 结构（G-R）过程，以解释半导体中的1/F噪声。这种间歇性G-R过程的平方生成了1/F的噪声组件，该噪声分量与Voss和Clarke的经验发现相关。间歇性地而不是连续产生G-R脉冲的陷阱被认为是在漂移和热搅动下的1/F噪声的起源。我们认为无需引入相关的温度波动或氧化物陷阱，以大量的时间常数来解释1/f噪声。
Voss and Clarke observed 1/f noise in the square of Johnson noise across samples in thermal equilibrium without applying a current. We refer to this phenomenon as thermal 1/f noise. Voss and Clarke suggested spatially correlated temperature fluctuations as an origin of thermal 1/f noise; they also showed that thermal 1/f noise closely matches the 1/f spectrum obtained by passing a current through the sample. An intermittent generation-recombination (g-r) process has recently been introduced to interpret 1/f noise in semiconductors. The square of this intermittent g-r process generates a 1/f noise component which correlates with Voss and Clarke's empirical findings. Traps which intermittently rather than continuously generate g-r pulses are suggested as the origin of 1/f noise under drift and thermal agitation. We see no need to introduce correlated temperature fluctuations or oxide traps with a large distribution of time constants to explain 1/f noise.
