论文标题
宽带2D半导体\ b {eta} -zrncl的层依赖性拉曼光谱和电子应用
Layer-dependent Raman spectroscopy and electronic applications of wide-bandgap 2D semiconductor \b{eta}-ZrNCl
论文作者
论文摘要
近年来，二维（2D）分层的半导体因其在下一代电子和光电子方面的潜力而受到了很多关注。宽带2D半导体在蓝色和紫外线波长区域尤为重要，而该区域的2D材料很少。在这里，单层\ b {eta} -Type氮化氮化物氯化物（\ b {eta} -ZRNCl）首次分离出来，这是一种空气稳定的分层材料，带块在散装中为〜3.0 eV。 Zrncl从单层BiLayer到批量的ZRNCL层依赖性拉曼散射的系统研究表明，其平面外A1g峰在〜189 cm-1处的蓝色移位。重要的是，单层不存在该A1G峰，这表明它是快速识别单层和厚度测定2D ZRNCL的指纹。基于几层ZRNCL的后栅场效应晶体管显示出高/OFF的比率为108。这些结果表明2D \ b {eta} -ZRNCl对于电子应用的潜力。
In recent years, two-dimensional (2D) layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in blue and ultraviolet wavelength region, while there are very few 2D materials in this region. Here, monolayer \b{eta}-type zirconium nitride chloride (\b{eta}-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ~3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blue shift of its out-of-plane A1g peak at ~189 cm-1. Importantly, this A1g peak is absent in monolayer, suggesting that it is a fingerprint to quickly identify monolayer and for the thickness determination of 2D ZrNCl. The back-gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 108. These results suggest the potential of 2D \b{eta}-ZrNCl for electronic applications.
