论文标题
基于各向异性单层$β$ -TEO $ _2 $的高性能和低功率晶体管
High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$-TeO$_2$
论文作者
论文摘要
二维（2D）半导体为高性能和节能设备提供了有希望的前景，尤其是在低于10 NM的制度中。灵感来自2D $β$ -TEO $ _2 $的成功制造，以及高高的/OFF比率和制造现场效应晶体管（FETS）的高空气稳定性[Nat。电子。 2021，4，277]，我们对单层$β$ -Teo $ _2 $的电子结构进行了全面研究，以及基于此材料的10 nm金属氧化物半导体FET（MOSFET）的设备性能。单层$β$ -Teo $ _2 $的各向异性电子结构在MOSFET的传输特性各向异性中起关键作用。我们表明，根据国际设备和系统的国际路线图（IRDS）2020目标，用于高性能设备的5.2 nm栅极长度N型MOSFET具有超过3700μa/μm的超高状态电流，这是高性能设备的目标，这受益于高度高度各向异性电极电子电电子有效质量。此外，就州现有的，子阈值的摇摆，延迟时间和功率 - 延期产品而言，单层$β$ -TEO $ _2 $ _2 $ MOSFET可以实现高性能和低功率设备的IRDS 2020目标。这项研究揭示了单层$β$ -TEO $ _2 $，作为未来纳米电子学中超级设备的有前途的候选人。
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabrication of 2D $β$-TeO$_2$ and the high on/off ratio and high air-stability of fabricated field effect transistors (FETs) [Nat. Electron. 2021, 4, 277], we provide a comprehensive investigation of the electronic structure of monolayer $β$-TeO$_2$ and the device performance of sub-10 nm metal oxide semiconductors FETs (MOSFETs) based on this material. The anisotropic electronic structure of monolayer $β$-TeO$_2$ plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultra-high on-state current exceeding 3700 μA/μm according to International Roadmap for Devices and Systems (IRDS) 2020 goals for high-performance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer $β$-TeO$_2$ MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, sub-threshold swing, delay time, and power-delay product. This study unveils monolayer $β$-TeO$_2$ as a promising candidate for ultra-scaled devices in future nanoelectronics.
