论文标题
大型Andreev绑定状态零偏置在弱耗散环境中的峰值
Large Andreev bound state zero bias peaks in a weakly dissipative environment
论文作者
论文摘要
我们研究混合纳米线设备中的Andreev绑定状态。这些状态的能量可以通过栅极或磁场调节为零，在隧道电导中显示在2E^2/h附近的较大零偏置峰（ZBP）。使用弱耗散铅探测这些大型ZBP，揭示了由于环境库仑阻滞（ECB）而引起的非富特液体温度（T）依赖性，这是作用于纳米线结的铅的相互作用效应。通过增加t，这些大型ZBP可以显示从分裂峰到ZBP的高度增加或过渡，两者都显着偏离了揭示了费米 - 液体t依赖性的非疾病设备。我们的结果表明，欧洲央行对安德里弗夫结合状态的竞争效果。
We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs using a weakly dissipative lead reveals non-Fermi liquid temperature (T) dependence due to environmental Coulomb blockade (ECB), an interaction effect from the lead acting on the nanowire junction. By increasing T, these large ZBPs either show a height increase or a transition from split peaks to a ZBP, both deviate significantly from non-dissipative devices where a Fermi-liquid T dependence is revealed. Our result demonstrates the competing effect between ECB and thermal broadening on Andreev bound states.
