论文标题
拓扑绝缘子中的双线性磁磁性：磁性障碍的作用
Bilinear magnetoresistance in topological insulators: role of magnetic disorder
论文作者
论文摘要
双线性磁磁性是一种非线性传输现象，它与电场和磁场线性缩放，并出现在具有强旋转轨道耦合的非磁性系统中，例如拓扑绝缘子（TIS）。使用半古典玻尔兹曼理论和广义的松弛时间近似，我们详细考虑了一个有效的模型，该模型描述了三维拓扑绝缘子的表面状态。我们表明，磁杂质的存在明显改变了BMR信号。通常，在磁杂质上散射会减少BMR的幅度。除此之外，当杂质电位的自旋依赖性成分占主导地位时，BMR的角度依赖性的附加调制出现。
Bilinear magnetoresistance is a nonlinear transport phenomenon that scales linearly with the electric and magnetic fields, and appears in nonmagnetic systems with strong spin-orbit coupling, such as topological insulators (TIs). Using the semiclassical Boltzmann theory and generalized relaxation time approximation, we consider in detail the bilinear magnetoresistance in an effective model describing surface states of three-dimensional topological insulators. We show that the presence of magnetic impurities remarkably modifies the BMR signal. In general, scattering on magnetic impurities reduces magnitude of BMR. Apart from this, an additional modulation of the angular dependence of BMR appears when the spin-dependent component of the impurity potential dominates the scalar one.
