论文标题

last $ _2 $ si $ _2 $的谐振软X射线散射

Resonant Soft X-Ray Scattering on LaPt$_2$Si$_2$

论文作者

Mukkattukavil, Deepak John, Hellsvik, Johan, Ghosh, Anirudha, Chatzigeorgiou, Evanthia, Nocerino, Elisabetta, Wang, Qisi, von Arx, Karin, Huang, Shih-Wen, Ekholm, Victor, Hossain, Zakir, Thamizhavel, Arumugum, Chang, Johan, Mansson, Martin, Nordstrom, Lars, Sathe, Conny, Agaker, Marcus, Rubensson, Jan-Erik, Sassa, Yasmine

论文摘要

X射线吸收(XAS)和共振非弹性X射线散射(RIX)光谱$ _2 $ _2 $ si $ _2 $单晶在Si L和La n边缘中显示。数据是用密度功能理论来解释的,表明可以用Si $ s $和$ d $局部局部密度(LPDOS)来描述SI光谱,而LA Spectra是由于准原子$ 4F $ 4F $刺激。计算表明,PT $ D $ -LPDO在被占领的国家中占主导地位,并且在空置状态下发现了一个尖锐的局部la $ f $州,这与观察结果一致。

X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt$_2$Si$_2$ single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si $s$ and $d$ local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local $4f$ excitations. Calculations show that Pt $d$-LPDOS dominates the occupied states, and a sharp localized La $f$ state is found in the unoccupied states, in line with the observations.

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