论文标题
GE基氧化物的混合分子束外延的杂种束外延
Hybrid Molecular Beam Epitaxy of Ge-based Oxides
论文作者
论文摘要
基于锗的氧化物（例如金红石Geo2），由于其宽带差距以及在高功率设备中应用的双极掺杂前景，引起了人们的注意。在这里，我们列出了将植也属于含GE的化合物的混合分子束外疗（MBE）的GE来源的使用也列出了也会使用也的GE源。我们将SN1-XGEXO2和SRSN1-XGEXO3用作模型系统来演示这种新的合成方法。 A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn1-xGexO2 on TiO2(001) substrates up to x = 0.54 and coherent perovskite SrSn1-xGexO3 on GdScO3(110) substrates up to x = 0.16.与SR位点相比，表征和第一原理的计算证实了GE优先占据SN位点的情况。这些发现证实了GTIP前体通过混合MBE生长含锗的氧化物的生存能力，因此为高质量的钙钛矿德国膜打开了大门。
Germanium-based oxides such as rutile GeO2 are garnering attention owing to their wide band gaps and the prospects for ambipolar doping for application in high-power devices. Here, we present the use of germanium tetraisopropoxide (GTIP) (an organometallic chemical precursor) as a source of Ge for the demonstration of hybrid molecular beam epitaxy (MBE) for Ge-containing compounds. We use Sn1-xGexO2 and SrSn1-xGexO3 as model systems to demonstrate this new synthesis method. A combination of high-resolution X-ray diffraction, scanning transmission electron microscopy, and X-ray photoelectron spectroscopy confirms the successful growth of epitaxial rutile Sn1-xGexO2 on TiO2(001) substrates up to x = 0.54 and coherent perovskite SrSn1-xGexO3 on GdScO3(110) substrates up to x = 0.16. Characterization and first-principles calculations corroborate that Ge preferentially occupies the Sn site, as opposed to the Sr site. These findings confirm the viability of the GTIP precursor for the growth of germanium-containing oxides by hybrid MBE, and thus open the door to high-quality perovskite germanate films.
