论文标题
第三维中的超导 - 通用电压可导量尺
Superconducting-semiconducting voltage-tunable qubits in the third dimension
论文作者
论文摘要
我们提出了基于高质量的，紧凑的硅壳（TSVS）的超导 - 传导量（Super-Semi）量子和耦合器设计。含有TSV的插入器“探针”晶片用于与样品晶片接触，例如，超导体 - 二元格式，外生生长，属量量子良好。通过利用探针晶片TSV的电容，将量子位中的大部分电场从半导体晶圆中的有损区域拉开。通过模拟，我们发现探针晶片可以减少量子晶片的电场参与薄基板的数量级，即使外延层厚度接近100 $μ$ m，也仍然很小。我们还展示了该方案如何扩展到具有无磁场的可调量值耦合的多量子系统。这种方法缩小了电压可调超导量子台的片上足迹，并有望加速对各种系统中超级异质结构的理解。
We propose superconducting-semiconducting (super-semi) qubit and coupler designs based on high-quality, compact through-silicon vias (TSVs). An interposer "probe" wafer containing TSVs is used to contact a sample wafer with, for example, a superconductor-proximitized, epitaxially-grown, germanium quantum well. By utilizing the capacitance of the probe wafer TSVs, the majority of the electric field in the qubits is pulled away from lossy regions in the semiconducting wafer. Through simulations, we find that the probe wafer can reduce the qubit's electric field participation in the sample wafer by an order of magnitude for thin substrates and remains small even when the epitaxial layer thickness approaches 100 $μ$m. We also show how this scheme is extensible to multi-qubit systems which have tunable qubit-qubit couplings without magnetic fields. This approach shrinks the on-chip footprint of voltage-tunable superconducting qubits and promises to accelerate the understanding of super-semi heterostructures in a variety of systems.
