论文标题
Ultra-sharp横向$ p \ text { - } n $连接在调制的石墨烯中
Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene
论文作者
论文摘要
我们演示了Ultra-Sharp（$ {\ Lesssim} \，10 \ Text {nm} $）横向$ p \ p \ text { - } n $连接石墨烯，使用电子传输，扫描隧道显微镜和第一原理计算。 $ p \ text { - } n $连接处位于石墨烯纸的差异掺杂区域之间的边界，其中一侧是固有的，另一侧是由薄薄的薄绝缘屏障的薄片接近$α$ -rucl $ _3 $的接近。我们提取$ p \ text { - } n $连接对设备电阻的贡献，以将界限放在连接宽度上。当固有区域和掺杂区域之间的边界由$α$ -rucl $ _3 $ _3 $位于距石墨烯的裂片结晶边缘定义时，我们达到了一个超偏交连接。石墨烯，六角硼和$α$ -rucl $ _3 $的异质结构中的扫描隧道光谱显示出在低于10 nm长度尺度上的潜在变化。第一原理计算表明，从$α$ -rucl $ _3 $薄片的边缘，石墨烯腐烂的电荷掺杂量急剧。
We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake.
