论文标题
呼吸kagome半导体NB3I8中平坦带的光谱证据
Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8
论文作者
论文摘要
kagome材料已成为研究几何，拓扑，相关性和磁性之间相互作用的扎实基础。最近，半导体NB3X8（X = Cl，Br，I）被预测为二维（2D）磁体，重要的是这些材料具有呼吸的Kagome几何形状。这些有前途的材料的电子结构研究仍然缺乏。在这里，我们报告了在500 MEV结合能量左右的呼吸 - kagome半导体NB3I8中的AT和弱分散带的光谱证据，这得到了我们的第一原则计算的很好支持。这些频带起源于niobium原子的呼吸kagome晶格，并具有NB D特征。发现它们对入射光子束的极化敏感。我们的研究提供了对电子结构和在可剥落的kagome半导体中的带拓扑结构的见解，从而提供了一个重要的平台，以了解2D材料中几何和电子相关性的相互作用。
Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evidence of at and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of Niobium atoms and have Nb d character. They are found to be sensitive to polarization of the incident photon beam. Our study provides insight into the electronic structure and at band topology in an exfoliable kagome semiconductor thereby providing an important platform to understand the interaction of geometry and electron correlations in 2D material.
