论文标题
轴突绝缘子中半量化的螺旋铰链电流
Half-Quantized Helical Hinge Currents in Axion Insulators
论文作者
论文摘要
我们建议半量化的螺旋铰链电流表现为轴突绝缘子（AI）的指纹。这些螺旋铰链电流在显微镜上源自无质量侧面表面狄拉克电子的外侧鹅孔（GH）移动，这些电子完全反映了铰链。同时，由于AI的大量顶部和底部表面存在，由GH偏移引起的螺旋电流被半量化。半古典波数据包分析发现了铰链电流具有拓扑来源，其半定量化对于参数变化是可靠的。最后，我们提出了一个实验可行的六端装置，通过测量非偏置电导率来识别半量化的铰链通道。我们的结果提高了对AIS中非平凡运输和拓扑磁电响应的理解。
We propose that half-quantized helical hinge currents manifest as the fingerprint of the axion insulator (AI). These helical hinge currents microscopically originate from the lateral Goos-Hänchen (GH) shift of massless side-surface Dirac electrons that are totally reflected from the hinges. Meanwhile, due to the presence of the massive top and bottom surfaces of the AI, the helical current induced by the GH shift is half-quantized. The semiclassical wave packet analysis uncovers that the hinge current has a topological origin and its half-quantization is robust to parameter changes. Lastly, we propose an experimentally feasible six-terminal device to identify the half-quantized hinge channels by measuring the nonreciprocal conductances. Our results advance the understanding of the non-trivial transport and topological magnetoelectric responses in AIs.
