论文标题

拓扑电荷FANO效应在多翼半金属中

Topological charge Fano effect in multi-Weyl semimetals

论文作者

Silva, W. C., Mizobata, W. N., Sanches, J. E., Ricco, L. S., Shelykh, I. A., de Souza, M., Figueira, M. S., Vernek, E., Seridonio, A. C.

论文摘要

我们从理论上分析了单个杂质多核半杂种杂种系统中的FANO干扰,并显示了拓扑电荷FANO效应在整体状态的局部密度中的出现。在多方半学分中,系统边界处的费米弧的数量由拓扑费$ j $确定,这是“散装边界”对应原理的直接结果。类似地,我们发现$ j $还通过嵌入式量子杂质调节系统的散装FANO配置文件。因此,通过增加$ j $,Fano Lineshape从共鸣剂(以$ j = 1 $(单个Weyl)为单位的共振剂演变为抗耐药剂,外推到了所谓的$ j \ gg1 $的所谓的高Weyl半学。特别是最大情况,由旋转对称性$ c_ {2j = 6} $保护,即$ j = 3 $(三重Weyl),它获得了不对称的fano配置文件,fano参数的绝对值预计为$ \ tan(c_ {2j = 6} $ counter $ c_ {2j} $,定义旋转角度。因此,$ j $术语中的FANO离散化引入了多翼半金属中的拓扑费用FANO效应。我们还建议一种运输设备,我们期望可以检测到所提出的FANO效应。

We theoretically analyze the Fano interference in a single impurity multi-Weyl semimetal hybrid system and show the emergence of the topological charge Fano effect in the bulk local density of states. In multi-Weyl semimetals, the number of Fermi arcs at the system boundaries is determined by the topological charge $J$, a direct consequence of the "bulk-boundary" correspondence principle. Analogously, we find that $J$ also modulates the bulk Fano profile of the system with an embedded quantum impurity. Thus, by increasing $J$, the Fano lineshape evolves from resonant, typical for $J=1$ (single Weyl), towards antiresonant, extrapolating to the so-called hyper Weyl semimetals with $J\gg1$. Specially for the maximum case protected by the rotational symmetry $C_{2J=6}$, namely the $J=3$ (triple Weyl), which acquires asymmetric Fano profile, the Fano parameter absolute value is predicted to be $\tan(C_{2J=6})$, where $C_{2J}\equiv(360^{\circ}/2J)$ defines the rotational angle. Hence, the Fano discretization in the $J$ term introduces the topological charge Fano effect in multi-Weyl semimetals. We also suggest a transport device where we expect that the proposed Fano effect could be detected.

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