论文标题
拓扑电荷FANO效应在多翼半金属中
Topological charge Fano effect in multi-Weyl semimetals
论文作者
论文摘要
我们从理论上分析了单个杂质多核半杂种杂种系统中的FANO干扰,并显示了拓扑电荷FANO效应在整体状态的局部密度中的出现。在多方半学分中,系统边界处的费米弧的数量由拓扑费$ j $确定,这是“散装边界”对应原理的直接结果。类似地,我们发现$ j $还通过嵌入式量子杂质调节系统的散装FANO配置文件。因此,通过增加$ j $,Fano Lineshape从共鸣剂(以$ j = 1 $(单个Weyl)为单位的共振剂演变为抗耐药剂,外推到了所谓的$ j \ gg1 $的所谓的高Weyl半学。特别是最大情况,由旋转对称性$ c_ {2j = 6} $保护,即$ j = 3 $(三重Weyl),它获得了不对称的fano配置文件,fano参数的绝对值预计为$ \ tan(c_ {2j = 6} $ counter $ c_ {2j} $,定义旋转角度。因此,$ j $术语中的FANO离散化引入了多翼半金属中的拓扑费用FANO效应。我们还建议一种运输设备,我们期望可以检测到所提出的FANO效应。
We theoretically analyze the Fano interference in a single impurity multi-Weyl semimetal hybrid system and show the emergence of the topological charge Fano effect in the bulk local density of states. In multi-Weyl semimetals, the number of Fermi arcs at the system boundaries is determined by the topological charge $J$, a direct consequence of the "bulk-boundary" correspondence principle. Analogously, we find that $J$ also modulates the bulk Fano profile of the system with an embedded quantum impurity. Thus, by increasing $J$, the Fano lineshape evolves from resonant, typical for $J=1$ (single Weyl), towards antiresonant, extrapolating to the so-called hyper Weyl semimetals with $J\gg1$. Specially for the maximum case protected by the rotational symmetry $C_{2J=6}$, namely the $J=3$ (triple Weyl), which acquires asymmetric Fano profile, the Fano parameter absolute value is predicted to be $\tan(C_{2J=6})$, where $C_{2J}\equiv(360^{\circ}/2J)$ defines the rotational angle. Hence, the Fano discretization in the $J$ term introduces the topological charge Fano effect in multi-Weyl semimetals. We also suggest a transport device where we expect that the proposed Fano effect could be detected.