论文标题
高质量PMMA/SIO $ _X $间隔的平面微腔的制造
Fabrication of high-quality PMMA/SiO$_x$ spaced planar microcavities for strong coupling of light with monolayer WS$_2$ excitons
论文作者
论文摘要
原子上薄的过渡金属二甲藻元化晶体(单层TMDC)中的激子极性子已成为有前途的候选人,可以实现拓扑传输,超有效的激光技术以及集体量子量子现象,例如在室温下北极式和北极式的凝聚力和超富度。但是,将单层TMDC集成到高质量的平面微腔中,以实现腔光子和TMDC激子(绑定的电子孔对)之间所需的强耦合已被证明具有挑战性。以前的整合方法必须妥协对单层,空腔光子寿命和微腔的横向大小的各种不利影响。在这里,我们展示了一种可扩展的方法,可以使用集成的单层WS $ _2 $ by-layer制造高质量的平面微腔,该方法通过使用聚甲基丙烯酸甲酯/氧化硅(PMMA/SIO $ _X $)作为腔间隔器。由于激子振荡器的强度受到PMMA层所需的处理步骤的良好保护,因此在这项工作中研究的微腔(其质量因子高于$ 10^3 $)可以在室温下在强烈的轻度耦合方案中运行。这是迈向制造晶圆尺度和图案的微腔的重要一步,用于工程兴奋的 - 帕利顿潜在景观,这对于实现许多建议的技术至关重要。
Exciton polaritons in atomically-thin transition metal dichalcogenide crystals (monolayer TMDCs) have emerged as a promising candidate to enable topological transport, ultra-efficient laser technologies, and collective quantum phenomena such as polariton condensation and superfluidity at room temperature. However, integrating monolayer TMDCs into high-quality planar microcavities to achieve the required strong coupling between the cavity photons and the TMDC excitons (bound electron-hole pairs) has proven challenging. Previous approaches to integration had to compromise between various adverse effects on the strength of light-matter interactions in the monolayer, the cavity photon lifetime, and the lateral size of the microcavity. Here, we demonstrate a scalable approach to fabricating high-quality planar microcavities with an integrated monolayer WS$_2$ layer-by-layer by using polymethyl methacrylate/silicon oxide (PMMA/SiO$_x$) as a cavity spacer. Because the exciton oscillator strength is well protected against the required processing steps by the PMMA layer, the microcavities investigated in this work, which have quality factors of above $10^3$, can operate in the strong light-matter coupling regime at room temperature. This is an important step towards fabricating wafer-scale and patterned microcavities for engineering the exciton-polariton potential landscape, which is essential for enabling many proposed technologies.