论文标题
探测超薄拓扑绝缘膜中的边缘状态电导
Probing edge state conductance in ultra-thin topological insulator films
论文作者
论文摘要
量子自旋大厅(QSH)绝缘子具有独特的电子特性,包括在其二维内部和一维自旋极边缘状态的带隙,其中电流流向弹道。在扫描隧道显微镜(STM)中,边缘状态表现为状态的局部密度。然而,纳米级光谱中边缘状态的观察与边缘通道中弹道传输的检测之间存在显着的研究差距,这通常依赖于微观光刻触点的传输实验。在这里,我们研究了三维拓扑绝缘子的几层胶片(bi $ _ {x} $ sb $ _ {1-x})_ 2 $ te $ _3 $,为此,已提出了向二维拓扑QSH绝缘子阶段的拓扑过渡。实际上,在频带间隙内观察到状态局部密度的边缘状态。然而,在具有四尖的STM的纳米级传输实验中,2和3五五倍层膜不会在边缘通道中表现出弹道电导。这表明光谱中边缘状态的检测可能会误导QSH相。相比之下,纳米级多尖运输实验是一种可有效指出弹道边缘通道的强大方法,而不是琐碎的边缘状态。
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (Bi$_{x}$Sb$_{1-x})_2$Te$_3$, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale transport experiments with a four-tip STM, 2 and 3 quintuple layer films do not exhibit a ballistic conductance in the edge channels. This demonstrates that the detection of edge states in spectroscopy can be misleading with regard to the identification of a QSH phase. In contrast, nanoscale multi-tip transport experiments are a robust method for effectively pinpointing ballistic edge channels, as opposed to trivial edge states, in quantum materials.