论文标题
太阳能电池效率，二极管因子和界面重组：光致发光的见解
Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence
论文作者
论文摘要
亚稳态缺陷可以决定性地影响二极管因子，从而影响太阳能电池的效率。二极管因子还受掺杂水平和太阳能电池中的重组机制的影响。在这里，我们量化了各种参数如何通过光致发光测量和模拟来改变二极管因子。此外，我们表明背面重组将Cuinse2太阳能电池中的开路电压降低了40 mV以上。 GA梯度的钝化表明与介电层的钝化一样有效。增加的背面重组降低了二极管因子，这不是因为亚稳定的缺陷转化较少，而是因为带有激发的照片产生的载体增加了。由于重组的增加会降低电压，因此二极管因子的这种降低是不需要的。另一方面，较高的掺杂水平会降低二极管因子，从而增加填充因子，同时增加电压。
Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination mechanisms in the solar cell. Here we quantify how the various parameters change the diode factor by photoluminescence measurements and simulations. In addition, we show that backside recombination reduces the open circuit voltage in CuInSe2 solar cells by more than 40 mV. Passivation by a Ga gradient is shown to be as efficient as a passivation by dielectric layers. Increased backside recombination reduces the diode factor, not because of less metastable defect transformation but because of a sublinear increase in photo generated carriers with excitation. This reduction in diode factor is unwanted, since the increased recombination reduces the voltage. A higher doping level, on the other hand, reduces the diode factor, thereby increasing the fill factor, and at the same time increases the voltage.
