论文标题
自组织的量子点在边缘扭曲的摩尔斯
Self-organised quantum dots in marginally twisted MoSe$_2$/WSe$_2$ and MoS$_2$/WS$_2$ bilayers
论文作者
论文摘要
互惠异质结构中的Moiré超级晶格是材料工程的强大工具。在边缘扭曲的（小错位角度，$θ$）的双层中，几乎晶格匹配的二维（2D）晶体Moiré模式采用相应堆叠的域的形式，由nodw Nodes的域壁（NODW）网络（NODW）隔开。在这里，我们表明，对于II型过渡金属二进制二进制二色质双层MOX $ _2 $/wx $ _2 $（x = S，SE），这些热点中的静水压素应为电子和孔创建量子点。我们研究了由此类物体约束的电子/孔状态，并通过内标内红外过渡讨论它们的表现。 $θ<0.5^{\ circ} $最强的电子/孔限制导致其重组线的红移产生单个光子发射器（SPE）（SPE），可通过未分支角度宽大地调节1 \。这些自组织的点可以在双层中形成，并具有对齐和倒置的Mox $ _2 $和WX $ _2 $单元细胞，从而发出具有不同极化的光子。我们还发现，应变的热点降低了内部的MOX $ _2 $ a-Exciton Energy，从而使量子点状态的选择性种群。
Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-II transition metal dichalcogenide bilayers MoX$_2$/WX$_2$ (X=S, Se), the hydrostatic strain component in these hot spots creates quantum dots for electrons and holes. We investigate the electron/hole states bound by such objects, discussing their manifestations via the intralayer intraband infrared transitions. The electron/hole confinement, which is strongest for $θ<0.5^{\circ}$, leads to a red-shift of their recombination line producing single photon emitters (SPE) broadly tuneable around 1\,eV by misalignment angle. These self-organised dots can form in bilayers with both aligned and inverted MoX$_2$ and WX$_2$ unit cells, emitting photons with different polarizations. We also find that the hot spots of strain reduce the intralayer MoX$_2$ A-exciton energy, enabling selective population of the quantum dot states.
