论文标题
SM $ _ {2} $ nimno $ _ {6} $ Ferromagnetic绝缘子的强大电子和可调磁状态
Robust electronic and tunable magnetic states in Sm$ _{2} $NiMnO$ _{6} $ ferromagnetic insulator
论文作者
论文摘要
铁磁绝缘子(FM-IS)是新一代量子电子应用感兴趣的材料。在这里,我们研究了在外交SM $ _ {2} $ nimno $ _ {6} $(SNMO)双钙钛矿薄膜中,在不同条件下制造的双层薄膜以实现不同水平的Ni/MN抗位点(ASDS)。 ASD的存在极大地影响了SNMO系统中的特征磁和各向异性行为,通过在主要的远程FM有序的宿主基质中引入短尺度抗铁磁相互作用。 $ Ni^{2+}+Mn^{4+} \ LongrightArrow ni^{3+}+Mn^{3+} $之间的阳离子位点之间的电荷不成比例,导致Ni和Mn物种的混合价值,这对ASD浓度不敏感。与温度相关的照片排放,照片吸收测量值与簇模型的相互作用模拟适当结合,表明Ni和Mn阳离子的特征状态可以令人满意地描述为未筛分的$ d^{n} $的线性组合,并筛选了$ d^{n+1} {n+1}。 2 \ textit {p}孔)。 Fermi级别的电子结构(E $ _ {F} $)展示了紧密间隔的Ni $ 3D $,MN $ 3D $和O $ 2P $ state。从被占用和空置的频段中,库仑排斥能的估计值($ U $)和配体到金属电荷转移能量($δ$),表明电荷转移绝缘性质,在Ni/mn $ 3D $ -o -O $ 2p $ 2p $ $ 2p $中的显着修改发生在整个FM Transiention Wemperion Privertion Wemperiation。 ASD的存在扩大了NI,MN $ 3D $频谱特征,而光谱位置则没有改变。在此,目前的工作将SNMO薄膜作为FM-I系统展示,可以通过在晶体结构中操纵ASD来调整FM状态,而I状态保持完整。
Ferromagnetic insulators (FM-Is) are the materials of interest for new generation quantum electronic applications. Here, we have investigated the physical observables depicting FM-I ground states in epitaxial Sm$ _{2} $NiMnO$ _{6} $ (SNMO) double perovskite thin films fabricated under different conditions to realize different level of Ni/Mn anti-site disorders (ASDs). The presence of ASDs immensely influence the characteristic magnetic and anisotropy behaviors in SNMO system by introducing short scale antiferromagnetic interactions in predominant long range FM ordered host matrix. Charge disproportion between cation sites in form of $ Ni^{2+}+Mn^{4+} \longrightarrow Ni^{3+}+Mn^{3+} $, causes mixed valency in both Ni and Mn species, which is found insensitive to ASD concentrations. Temperature dependent photo emission, photo absorption measurements duly combined with cluster model configuration interaction simulations, suggest that the eigenstates of Ni and Mn cations can be satisfactorily described as a linear combination of the unscreened $ d^{n} $ and screened $ d^{n+1} \underline{L} $ ($ \underline{L} $: O 2\textit{p} hole) states. The electronic structure across the Fermi level (E$ _{F} $) exhibits closely spaced Ni $ 3d $, Mn $ 3d $ and O $ 2p $ states. From occupied and unoccupied bands, estimated values of the Coulomb repulsion energy ($ U $) and ligand to metal charge transfer energy ($ Δ$), indicate charge transfer insulating nature, where remarkable modification in Ni/Mn $ 3d $ - O $ 2p $ hybridization takes place across the FM transition temperature. Existence of ASD broadens the Ni, Mn $ 3d $ spectral features, whereas spectral positions are found to be unaltered. Hereby, present work demonstrates SNMO thin film as a FM-I system, where FM state can be tuned by manipulating ASD in the crystal structure, while I state remains intact.