论文标题
界面对石墨烯对钛生长的影响
Interface effects on titanium growth on graphene
论文作者
论文摘要
金属和石墨烯之间的质量差界面会导致非线性，并损害石墨烯设备中的载体迁移率。在这里，我们使用像校正的扫描透射电子显微镜来观察在原子清洁石墨烯上生长的六角形的ti纳米岛，并在晶格之间建立30°的外延关系。由于Ti对石墨烯的强结合，在单层的极限下，Ti晶格常数由石墨烯外延介导，并且与散装Ti相比，由Ca张紧。 3.7％至0.306（3）nm。所得的界面应变略大于密度功能理论计算所预测的界面菌株。我们的早期增长阶段的研究还表明，与广泛的假设相比，Ti并不完全湿石墨烯，而是在厚度为1-2层的簇中生长。拉曼光谱意味着Ti岛和石墨烯基板之间的电荷转移。
Poor quality interfaces between metal and graphene cause non-linearity and impair the carrier mobility in graphene devices. Here, we use aberration corrected scanning transmission electron microscopy to observe hexagonally close-packed Ti nano-islands grown on atomically clean graphene, and establish a 30° epitaxial relationship between the lattices. Due to the strong binding of Ti on graphene, at the limit of a monolayer, the Ti lattice constant is mediated by the graphene epitaxy, and compared to bulk Ti, is strained by ca. 3.7% to a value of 0.306(3) nm. The resulting interfacial strain is slightly greater than what has been predicted by density functional theory calculations. Our early growth stage investigations also reveal that, in contrast to widespread assumptions, Ti does not fully wet graphene but grows initially in clusters with a thickness of 1-2 layers. Raman spectroscopy implies charge transfer between the Ti islands and graphene substrate.
