论文标题

使用光学第二次谐波生成研究的抗磁性自旋方向和磁性域结构

Antiferromagnetic Spin Orientation and Magnetic Domain Structure in Epitaxially Grown MnN Studied using Optical Second Harmonic Generation

论文作者

Lee, Joongwon, Zhang, Zexuan, Xing, Huili, Jena, Debdeep, Rana, Farhan

论文摘要

MNN是一种属于过渡金属氮化金属家族的中心对称性抗fiferromagnet,其阳离子温度较高,各向异性场较低,并且每个MN原子具有很大的磁矩。尽管最近进行了一些实验和理论研究,但材料的自旋对称性(磁点组)和磁性域结构仍然未知。在这项工作中,我们使用光学第二次谐波生成(SHG)研究薄外延生长的单晶(001)MNN膜的磁性结构。我们的工作表明,MNN中的自旋矩远离[001]方向,并且(001)平面中的自旋矩的成分沿两个可能的平面对称轴([100]或[110])对齐,从而导致磁性点组对称为2/m1'。我们的工作排除了先前在文献中已经讨论过的磁点组对称4/mmm1'和mmm1'。在MNN中,可以使用与2/M1磁点对称性一致的四个不同的自旋域。基于在大型样品区域收集的第二个谐波信号的极化依赖性强度的观察到的统计模型使平均域大小的上限为0.65微米。我们的结果表明,SHG可用于探测金属抗铁磁铁中的磁顺序。预计这项工作将有助于使用抗铁磁铁进行自旋型应用程序的最新努力。

MnN is a centrosymmetric collinear antiferromagnet belonging to the transition metal nitride family with a high Neel temperature, a low anisotropy field, and a large magnetic moment per Mn atom. Despite several recent experimental and theoretical studies, the spin symmetry (magnetic point group) and magnetic domain structure of the material remain unknown. In this work, we use optical second harmonic generation (SHG) to study the magnetic structure of thin epitaxially-grown single-crystal (001) MnN films. Our work shows that spin moments in MnN are tilted away from the [001] direction and the components of the spin moments in the (001) plane are aligned along one of the two possible in-plane symmetry axes ([100] or [110]) resulting in a magnetic point group symmetry of 2/m1'. Our work rules out magnetic point group symmetries 4/mmm1' and mmm1' that have been previously discussed in the literature. Four different spin domains consistent with the 2/m1' magnetic point group symmetry are possible in MnN. A statistical model based on the observed variations in the polarization-dependent intensity of the second harmonic signal collected over large sample areas puts an upper bound of 0.65 microns on the mean domain size. Our results show that SHG can be used to probe the magnetic order in metallic antiferromagnets. This work is expected to contribute to the recent efforts in using antiferromagnets for spintronic applications.

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