论文标题
P型Cu（in Ga）SE2需要多少镀具有多少伽列维？
How much gallium do we need for a p-type Cu(In,Ga)Se2?
论文作者
论文摘要
在金黄铜矿Cu（in，GA）SE2中的掺杂取决于固有点缺陷。在三元cuinse2中，可以根据生长条件和化学计量法获得N型和P型电导率：当种植Cu-Poor，Se-Poor和无碱性时，可获得N型。另一方面，发现CUGASE2始终是P型半导体，无论它是来自天然缺陷还是外部杂质。在这一贡献中，我们研究了铜含量依赖的Cu-Poor Cu（in Ga）SE2单晶中的N-to-P转变。我们的结果表明，CU（IN，GA）SE2仍然可以作为N型半导体生长，直到凝胶含量达到15-19％的临界浓度，而N-to-p则发生。此外，从依赖温度的电导率测量值中提取的塞贝克系数和激活能的趋势表明，载体浓度在过渡浓度附近下降了大约两个数量级。我们提出的模型基于添加胆管引起的供体和受体缺陷的形成能和受体缺陷的差异解释了N到P转变。
Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no matter whether it comes from native defects or extrinsic impurities. In this contribution, we study the N-to-P transition in Cu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Our results show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductor until the gallium content reaches the critical concentration of 15-19%, where the N-to-P transition occurs. Furthermore, trends in the Seebeck coefficient and activation energies extracted from temperature-dependent conductivity measurements, demonstrate that the carrier concentration drops by around two orders of magnitude near the transition concentration. Our proposed model explains the N-to-P transition based on the differences in formation energies of donor and acceptor defects caused by the addition of gallium.
