论文标题
全面的单通道in2O3纳米纤维FET，接近20 mA/μm排水电流
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
论文作者
论文摘要
在这项工作中，我们在兼容的后端（BEOL）过程中展示了原子层沉积（ALD）单渠道含量氧化物（IN2O3）纳米吡啶FET。在IN2O3 GAA纳米纤维FET中实现最大状态电流（离子）为19.3 mA/μm（接近20 mA/μm），其通道厚度（TIO）为3.1 nm，通道长度（LCH）为40 nm，通道宽度（WCH）为30 Nm和Dielectric HFO2的通道宽度（WCH）。从IN2O3 FET获得的记录高漏极电流比任何常规的单通道半导体FET高约一个数量级。这种非凡的排水电流及其相关的状态性能证明了ALD IN2O3是一个有前途的氧化物半导体通道，在Beol兼容单片3D集成中，有很大的机会。
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/μm (near 20 mA/μm) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.
