论文标题
单层MOS2的应变增强迁移率
Strain-Enhanced Mobility of Monolayer MoS2
论文作者
论文摘要
应变工程是调整半导体特性的重要方法，并已用于改善硅晶体管的迁移率已有几十年了。最近，理论研究预测，应变还可以改善二维（2D）半导体的迁移率，例如通过减少间隔散射或降低有效质量。在这里，我们在柔性底物上实验表明，具有单轴拉伸应变的单层MOS2晶体管中的应变增强的电子迁移率。在释放菌株后，抗拉力应变的最高应变为0.7％，在州的电流和迁移率几乎翻了一番。对于单层MOS2，我们还显示了一个高达200的栅极依赖性量规因子，该因子高于以前报告的薄薄层薄膜的先前值。这些结果证明了应变工程2D半导体对于集成电路中的性能提高或柔性应变传感器等应用的重要性。
Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also improve the mobility of two-dimensional (2D) semiconductors, e.g. by reducing intervalley scattering or lowering effective masses. Here, we experimentally show strain-enhanced electron mobility in monolayer MoS2 transistors with uniaxial tensile strain, on flexible substrates. The on-state current and mobility are nearly doubled with tensile strain up to 0.7%, and devices return to their initial state after release of strain. We also show a gate-voltage-dependent gauge factor up to 200 for monolayer MoS2, which is higher than previous values reported for sub-1 nm thin piezoresistive films. These results demonstrate the importance of strain engineering 2D semiconductors for performance enhancements in integrated circuits, or for applications such as flexible strain sensors.
