论文标题
部分可观测时空混沌系统的无模型预测
Metal-insulator transition in type II heterostructures based on transition metal dichalcogenides
论文作者
论文摘要
通过分析解决了基于过渡金属二核苷的II型异质结构中电荷载体之间库仑相互作用的问题。在足够高的电荷载体密度下，获得了层中激子能量的密度依赖性。层间激子的能量在金属 - 绝缘体过渡点中趋于零。提出的计算方案使得可以找到该过渡密度的温度依赖性。
The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal--insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.
