论文标题
掺杂过渡金属杂质的III-V半导体中P-D杂交的原子尺度可视化
Atomic scale visualization of the p-d hybridization in III-V semiconductors doped with transition metal impurities
论文作者
论文摘要
半导体宿主中过渡金属杂质的P-D杂交是伴侣价电子和局部自旋的机制。我们使用扫描隧道显微镜和光谱与密度功能理论相结合来探测Cr单杂质与GAAS宿主的原子量表杂交。结合了在半导体表面取代的Cr的状态映射和间隙状态光谱的空间密度，我们给出了CR上CR上强烈反对性波函数的空间扩展和电子结构的详细图片（110）。第一原理计算允许识别每个状态的电子特性和来源，并表明具有“滴眼剂”裂片的主要共振峰和波函数在IIII-V半导体中对3D金属杂质的实验观察到的波函数是P-D金属杂质的直接局部证据。
p-d hybridization of transition metal impurities in a semiconductor host is the mechanism that couples valence-band electrons and localized spins. We use scanning tunneling microscopy and spectroscopy combined with density functional theory to probe at the atomic scale hybridization of Cr single impurities with GaAs host. Combining spatial density of states mapping and in-gap states spectroscopy of the Cr substituted at the surface of the semiconductor, we give a detailed picture of the spatial extension and the electronic structure of the strongly anisotropic wave function of Cr on GaAs(110). First principles calculations allow to identify electronic character and origin of each states and show that the main resonance peaks and the wave function with "drop-eyes" lobes experimentally observed for 3d metal impurities in III-V semiconductor are direct local evidences of the p-d hybridization.
