论文标题
氮化硅波导带有固有的单光子发射剂，用于集成的量子光子。
Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics
论文作者
论文摘要
最近发现，氮化硅（SIN）中室温固有的单光子发射器为将量子光源与已建立的Sin Photonic平台与量子光源无缝整合的独特机会提供了独特的机会。在这项工作中，我们开发了一种新颖的方法，以实现由固有的量子发射器制成的平面波导，并证明了单光子发射耦合到波导模式。发现这些发射器的观察到的发射耦合与数值模拟一致。单光子发射与波导模式的耦合通过二阶自相关的测量通过光子芯片远离光子芯片。拟合二阶自相关直方图产生$ g^{（2）}（0）= 0.35 \ pm0.12 $，无光谱过滤或背景校正，均超过每秒$ 10^4 $计数。这证明了从固定的固有单光子发射器到单层整合的波导，这是第一个成功的光子耦合。我们工作的结果为实现可扩展的，技术就绪的量子光子积分电路的方式有效地与固态量子发射器连接在一起。
The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters.
