论文标题

拓扑绝缘子和Rashba纳米线导致的超导二极管效应

Superconducting diode effect due to magnetochiral anisotropy in topological insulator and Rashba nanowires

论文作者

Legg, Henry F., Loss, Daniel, Klinovaja, Jelena

论文摘要

超导体的临界电流可以取决于当逆转和时间反转对称性损坏时,由于磁化器各向异性引起的电流方向,这种效应称为超导(SC)二极管效应。在这里,我们考虑了一维(1D)系统,其中通过接近效应诱导超导性。在拓扑绝缘子和Rashba纳米线中,由于沿着自旋极化轴施加的磁场和垂直于纳米线引起的SC二极管效应提供了量度的反转对称性,在存在超导体的情况下。此外,SC二极管效应对平行于纳米线应用的磁场的附加组件以及化学电位的位置的强烈依赖性可用于检测设备位于参数空间中,其中预计相位过渡到拓扑超导性。

The critical current of a superconductor can depend on the direction of current flow due to magnetochiral anisotropy when both inversion and time-reversal symmetry are broken, an effect known as the superconducting (SC) diode effect. Here, we consider one-dimensional (1D) systems in which superconductivity is induced via the proximity effect. In both topological insulator and Rashba nanowires, the SC diode effect due to a magnetic field applied along the spin-polarization axis and perpendicular to the nanowire provides a measure of inversion symmetry breaking in the presence of a superconductor. Furthermore, a strong dependence of the SC diode effect on an additional component of magnetic field applied parallel to the nanowire as well as on the position of the chemical potential can be used to detect that a device is in the region of parameter space where the phase transition to topological superconductivity is expected to arise.

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