论文标题
在高平均电流的高压直流电子枪中CS-SB-O激活的GAA的操作
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
论文作者
论文摘要
负电子亲和力（NEA）激活的GAAS光（NEA）是产生高电流（> 1 MA）自旋极化电子束的最受欢迎的选择。尽管它很受欢迎，但短暂的运营寿命是该材料的主要缺点。最近的工作表明，可以使用具有最小不良反应的鲁棒CS-SB-O NEA层来改善寿命。在这项工作中，我们在高压环境中使用这种新的激活方法操作GAAS光座，以提取高电流。我们观察到光谱对寿命改善的依赖性。特别是，与CS-O活化的GAA相比，CS-SB-O活化的GAA在780 nm处的寿命增加了45％。
Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (> 1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs-Sb-O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We observed spectral dependence on the lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm for Cs-Sb-O activated GaAs compared to Cs-O activated GaAs.
